General Purpose and Low VCE(sat) Transistors | BUV21

40 A, 200V NPN Bipolar Power Transistor

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The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.

  • High DC current gain:
    hFE min. = 20 at IC = 12 A
  • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
  • Very fast switching times: TF max. = 0.4 µs at IC=25A
  • Pb-Free Package is Available

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MSL Temp (°C)

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

BUV21G

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量产中

CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

No

NPN

General Purpose

0.6

40

200

250

7

1.5

-

20

60

8

250

38.86 x 25.91 x 7.43

$13.3714

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可靠性数据

Die Related Summary Data

Device: BUV21G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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