BUV21

40 A, 200V NPN Bipolar Power Transistor

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CAD模型

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The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.

特性

High DC current gain:
h_FE min. = 20 at I_C = 12 A
Low V_CE(sat), V_CE(sat) max. = 0.6 V at I_C = 8 A
Very fast switching times: T_F max. = 0.4 µs at I_C=25A
Pb-Free Package is Available

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Reference Price

BUV21G

Active

TO-204-2 / TO-3-2

197A-05

FTRAY

100

NPN

General Purpose

0.6

200

250

1.5

250

$13.3714

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General Purpose and Low VCE(sat) Transistors | BUV21

40 A, 200V NPN Bipolar Power Transistor

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