40 A, 200V NPN Bipolar Power Transistor

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The 40 A, 200 V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.

  • High DC current gain:
    hFE min. = 20 at IC = 12 A
  • Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A
  • Very fast switching times: TF max. = 0.4 µs at IC=25A
  • Pb-Free Package is Available

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BUV21G

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Active

CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

NA

0

FTRAY

100

Y

NPN

General Purpose

0.6

40

200

250

7

1.5

-

20

60

8

250

$13.3714

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