General Purpose and Low VCE(sat) Transistors | MJE18004D2

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

已停产

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概览

The MJE18004D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (+/- 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA
  • Extremely Low Storage Time Min/Max Guarantees Due to theH2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCE(sat)
  • "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
  • Pb-Free Package is Available

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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参考价格

MJE18004D2

联系销售

已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

-

General Purpose

-

-

-

-

-

-

-

15

-

-

75

Price N/A

More Details

MJE18004D2G

联系销售

已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

NPN

General Purpose

-

-

450

-

-

-

-

15

-

-

75

Price N/A

More Details

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