General Purpose and Low VCE(sat) Transistors | MJE18004D2

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

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概览

The MJE18004D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (+/- 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

  • Low Base Drive Requirement
  • High Peak DC Current Gain (55 Typical) @ IC = 100 mA
  • Extremely Low Storage Time Min/Max Guarantees Due to theH2BIP Structure which Minimizes the Spread
  • Integrated Collector-Emitter Free Wheeling Diode
  • Fully Characterized and Guaranteed Dynamic VCE(sat)
  • "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
  • Pb-Free Package is Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE18004D2

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

-

General Purpose

-

-

-

-

-

-

-

15

-

-

75

Price N/A

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MJE18004D2G

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

General Purpose

-

-

450

-

-

-

-

15

-

-

75

Price N/A

More Details

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