General Purpose and Low VCE(sat) Transistors | MJE200(LEGACY FAIRCHILD)

5.0 A, 25 V NPN Bipolar Power Transistor

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概览

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -
    hFE = 70 (Min) @ IC = 500 mAdc
    hFE = 45 (Min) @ IC = 2.0 Adc
    hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product -
    fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

MJE200STU

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已停产

CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

No

NPN

General Purpose

1.8

5

40

-

8

2.5

1.6

45

180

65

15

Price N/A

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