4.0 A, 100 V NPN Bipolar Power Transistor

添加至我的收藏

概览

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

  • High Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
  • High DC Current Gain @ IC = 200 mAdc
    hFE = 40-200
    hFE = 40-120 - MJE243, MJE253
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
  • High Current Gain Bandwidth Product -
    fT = 40 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages
    ICBO = 100 nAdc (Max) @ Rated VCB
  • Pb-Free Packages are Available

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

2

分享

Product Groups:

Orderable Parts:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MJE243

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

100

-

-

-

-

40

180

40

15

Price N/A

More Details

MJE243G

Loading...

Active

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

NPN

General Purpose

0.6

4

100

100

7

1.8

1.5

40

180

40

15

$0.2808

More Details

Show More

1-25 of 25

Products per page

Jump to :