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General Purpose and Low VCE(sat) Transistors | MJE243
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The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
- High Collector-Emitter Sustaining Voltage -
VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 - High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
hFE = 40-120 - MJE243, MJE253 - Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc - High Current Gain Bandwidth Product -
fT = 40 MHz (Min) @ IC = 100 mAdc - Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB - Pb-Free Packages are Available
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MJE243
Pb
A
H
P
TO-225-3
NA
0
BLKBX
500
N
NPN
General Purpose
0.6
4
100
-
-
-
-
40
180
40
15
Price N/A
More Details
MJE243G
Active
Pb
A
H
P
TO-225-3
NA
0
BLKBX
500
N
NPN
General Purpose
0.6
4
100
100
7
1.8
1.5
40
180
40
15
$0.2808
More Details
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