General Purpose and Low VCE(sat) Transistors | MJE243
概览
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
- High Collector-Emitter Sustaining Voltage -
VCEO(sus) = 100 Vdc (Min) MJE243, MJE253 - High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
hFE = 40-120 - MJE243, MJE253 - Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc - High Current Gain Bandwidth Product -
fT = 40 MHz (Min) @ IC = 100 mAdc - Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB - Pb-Free Packages are Available
产品参数及购买信息
搜寻
Close Search
产品:
2
分享
排序方式
产品系列:
┗
可订购器件:
2
Show More
1-25 of 25
Products per page
Jump to :
1
支持服务
联系安森美销售团队获得支持，查询或者对比产品细节。
联系销售
