AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
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可靠性数据
Die Related Summary Data
Device: AFGH4L25T120RWD
Equivalent to wafer fab process: FS7, FRD
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
FS7, FRD
0
2029065257
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)