IGBTs | AFGY120T65SPD-B4

IGBT – 带VCESAT和VTH分档的650V、120A 场截止型沟槽式IGBT

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概览

AFGY120T65SPD-B4是一款基于沟槽式场截止 型第3代技术的650V 120A IGBT。这款产品基于Vcesat 和 Vth 进行分档，即每个单独单元的顶部标记定义了该器件的Vcesat和Vth范围，让客户能够并行组装参数分布非常接近的单元，从而在应用中实现更好的电流共享。

  • 电动汽车主驱电机逆变器

  • 电动车
  • 混动电车

  • Vcesat 和 Vth 分档
  • 车规级认证
  • 极低饱和电压：VCE(sat) = 1.5 V（典型值）@ IC = 120 A
  • 最高结温：TJ = 175°C
  • 正温度系数
  • 紧凑的参数分布
  • 高输入阻抗
  • 零件100%经过动态测试
  • 短路耐受性 > 6μs @ 25 oC
  • 与软性、快速恢复Extremefast二极管共封装
  • 无铅、无卤素/BFR，并且符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

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AFGY120T65SPD-B4

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

30

N

-

650

240

1.5

1.3

3.5

6.8

123

-

162

6

-

882

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: AFGY120T65SPD-B4

Equivalent to wafer fab process: IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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