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AFGY120T65SPD-B4是一款基于沟槽式场截止 型第3代技术的650V 120A IGBT。这款产品基于Vcesat 和 Vth 进行分档,即每个单独单元的顶部标记定义了该器件的Vcesat和Vth范围,让客户能够并行组装参数分布非常接近的单元,从而在应用中实现更好的电流共享。
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CAD Models
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V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
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Eoff Typ (mJ)
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Irr Typ (A)
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EAS Typ (mJ)
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Reference Price
AFGY120T65SPD-B4
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
650
240
1.5
1.3
3.5
6.8
123
-
162
6
-
882
Yes
Price N/A
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可靠性数据
Die Related Summary Data
Device: AFGY120T65SPD-B4
Equivalent to wafer fab process: IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)