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这款 ADF IGBT 系列采用了场截止沟槽第 3 代 IGBT,提供极低的 Rds(on) 和更快的开关特性,实现出众能效。这种技术针对各种 PFC(功率因数校正)拓扑结构进行了完全优化;单升压,多通道交错等,具备超过 20KHz 的开关性能。TO3P 封装为更广泛的 SOA 提供超低热阻,保证系统的稳定性。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
FGA6065ADF
Pb
A
H
P
TO-3P-3L
NA
0
TUBE
450
N
-
650
60
1.8
1.8
0.52
2.46
271
-
84
-
-
306
No
Price N/A
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可靠性数据
Die Related Summary Data
Device: FGA6065ADF
Equivalent to wafer fab process: 3B,IJ
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3B,IJ
0
1915930880
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)