IGBTs | FGA6065ADF

IGBT，650V，60A，场截止沟槽

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概览

这款 ADF IGBT 系列采用了场截止沟槽第 3 代 IGBT，提供极低的 Rds(on) 和更快的开关特性，实现出众能效。这种技术针对各种 PFC（功率因数校正）拓扑结构进行了完全优化；单升压，多通道交错等，具备超过 20KHz 的开关性能。TO3P 封装为更广泛的 SOA 提供超低热阻，保证系统的稳定性。

  • 最大结温： TJ = 175 °C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat)=1.8 V（典型值） （IC=60 A）
  • 部件 100% 经过 ILM (1)检测
  • 高输入阻抗
  • 快速开关
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

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FGA6065ADF

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Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

650

60

1.8

1.8

0.52

2.46

271

-

84

-

-

306

No

Price N/A

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