IGBTs | FGH60N60SFDTU

IGBT，场截止，600V，60A

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概览

安森美半导体的场截止 IGBT 采用新型场截止 IGBT 工艺，为太阳能逆变器、UPS、焊接机和 PFC 等低导通和开关损耗至关重要的应用。

  • Solar Inverter
  • UPS
  • Welder
  • PFC

  • High Current Capability
  • Low Saturation Voltage : VCE(sat) = 2.3V @ IC = 60 A
  • High Input Impedance
  • Fast Switching
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGH60N60SFDTU

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Last Shipments

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

60

2.3

-

0.67

1.79

179

-

198

-

-

378

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH60N60SFDTU

Equivalent to wafer fab process: 3B,IM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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