IGBTs | FGY160T65S_F085

IGBT，650V，160A 场截止，带软快速恢复二极管的沟槽

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概览

  • 适用于汽车
  • 非常低的饱和电压： VCE(sat) = 1.6 V（典型值） @ IC = 160 A
  • 最高结温： TJ = 175 °C
  • 正温度系数
  • 紧密的参数分布
  • 高输入阻抗
  • 部件 100% 进行动态检测
  • 短路耐用性 > 6 us @ 25 °C
  • 与快速软恢复极快速二极管共封装

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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EAS Typ (mJ)

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FGY160T65SPD-F085

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CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

450

Y

-

650

240

-

1.4

5.7

12.4

132

-

163

6

-

882

-

$7.7378

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可靠性数据

Die Related Summary Data

Device: FGY160T65SPD-F085

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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