IGBT,650V,160A 场截止,带软快速恢复二极管的沟槽

概览

  • 适用于汽车
  • 非常低的饱和电压: VCE(sat) = 1.6 V(典型值) @ IC = 160 A
  • 最高结温: TJ = 175 °C
  • 正温度系数
  • 紧密的参数分布
  • 高输入阻抗
  • 部件 100% 进行动态检测
  • 短路耐用性 > 6 us @ 25 °C
  • 与快速软恢复极快速二极管共封装

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGY160T65SPD-F085

Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

-

650

240

-

1.4

5.7

12.4

132

-

163

6

-

882

-

$7.7378

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