此绝缘门双极晶体管 (IGBT) 采用耐用和成本高效的超场截止沟槽结构,在要求较高的开关应用中提供卓越的性能,还能提供低导通状态电压和最低的开关损耗。该 IGBT 非常适用于 UPS 和太阳能应用。该器件结合了一个软性和快速的共封装续流二极管,带有较低正向电压。
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可靠性数据
Die Related Summary Data
Device: FGY75T120SQDN
Equivalent to wafer fab process: IGN IGBT
产品技术
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGN IGBT
12
30217118471
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)