IGBTs | HGT1S10N120BNS

IGBT，1200V，NPT

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概览

HGT1S10N120BNST 基于无通冲孔 (NPT) IGBT 设计。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源
  • 17 A、1200 V，TC = 110°C
  • 低饱和电压：V CE(sat) = 2.45 V，需 I C = 10 A
  • 典型下降时间。. . . . . . . . TJ= 150°C时为140ns
  • 短路额定值
  • 低传导损耗

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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EAS Typ (mJ)

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HGT1S10N120BNS

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

TUBE

800

N

-

1200

17

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

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HGT1S10N120BNST

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

1200

17

2.45

-

0.8

0.32

-

-

100

8

80

298

No

$2.0639

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