IGBTs | HGT1S10N120BNS

IGBT，1200V，NPT

量产中

相似产品推荐

数据表

购买

概览

HGT1S10N120BNST基于非穿通型（NPT）IGBT 设计。 IGBT非常适合许多在中等频率下运行、非常需要低传导损耗的高压开关应用，例如UPS、光伏逆变器、电机控制和电源。

  • 不间断电源
  • 17 A、1200 V，TC = 110°C
  • 低饱和电压：V CE(sat) = 2.45 V @ I C = 10 A
  • 典型下降时间。. . . . . . . . TJ= 150°C时为140ns
  • 短路额定值
  • 低传导损耗

工具和资源

与HGT1S10N120BNS相关的产品服务、工具和其他资源

CAD Model

CAD模型

物质成分

产品更改通知

可靠性数据

产品参数及购买信息

搜寻

Close Search

产品:

2

分享

排序方式

产品系列:

┗

可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

HGT1S10N120BNS

联系销售

Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

TUBE

800

No

-

1200

17

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

More Details

HGT1S10N120BNST

联系销售

量产中

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

No

-

1200

17

2.45

-

0.8

0.32

-

-

100

8

80

298

No

$2.0639

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

支持服务

联系安森美销售团队获得支持，查询或者对比产品细节。

可靠性数据

Die Related Summary Data

Device: HGT1S10N120BNS

Equivalent to wafer fab process: IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

3

4562573939

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

重新搜寻