IGBTs | HGT1S10N120BNS

IGBT，1200V，NPT

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概览

HGT1S10N120BNST 基于无通冲孔 (NPT) IGBT 设计。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源
  • 17 A、1200 V，TC = 110°C
  • 低饱和电压：V CE(sat) = 2.45 V，需 I C = 10 A
  • 典型下降时间。. . . . . . . . TJ= 150°C时为140ns
  • 短路额定值
  • 低传导损耗

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGT1S10N120BNS

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Last Shipments

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

TUBE

800

N

-

1200

17

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

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HGT1S10N120BNST

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

260

REEL

800

N

-

1200

17

2.45

-

0.8

0.32

-

-

100

8

80

298

No

$2.0639

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