IGBTs | NGTB30N140IHR3

1400V, 30A, IGBT with Monolithic Free Wheeling Diode

Obsolete

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This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective ultra Field Stop (FS) Trench construction and providessuperior performance. It is especially designed for low on−state and iswell suited for resonant or soft switching topologies, such as thoseused in inductive heating applications. The device contains a reverseconducting diode integrated on the same die, which makes the deviceconstruction very cost effective.

  • Inductive Heating
  • Consumer Appliances
  • Soft Switching

  • Industrial

  • Extremely Efficient Trench with ultra Fieldstop Technology
  • 1400 V Breakdown Voltage
  • These are Pb−Free Devices

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NGTB30N140IHR3WG

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Obsolete

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Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1400

30

1.95

2.1

1.05

~NA~

~NA~

~NA~

163

~NA~

~NA~

178

Yes

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可靠性数据

Die Related Summary Data

Device: NGTB30N140IHR3WG

Equivalent to wafer fab process: HVFET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HVFET

21

40576236131

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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