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1400V, 30A, IGBT with Monolithic Free Wheeling Diode
Obsolete
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective ultra Field Stop (FS) Trench construction and providessuperior performance. It is especially designed for low on−state and iswell suited for resonant or soft switching topologies, such as thoseused in inductive heating applications. The device contains a reverseconducting diode integrated on the same die, which makes the deviceconstruction very cost effective.
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V(BR)CES Typ (V)
IC Max (A)
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VF Typ (V)
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Co-Packaged Diode
Reference Price
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
1400
30
1.95
2.1
1.05
~NA~
~NA~
~NA~
163
~NA~
~NA~
178
Yes
Price N/A
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可靠性数据
Die Related Summary Data
Device: NGTB30N140IHR3WG
Equivalent to wafer fab process: HVFET
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
HVFET
21
40576236131
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)