This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.
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NGTB45N60SWG
Obsolete
Pb
A
H
P
TO-247
NA
0
TUBE
30
N
-
600
45
2.2
1.1
0.55
-
376
22
134
-
-
250
Yes
Price N/A
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