This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastco−packaged free wheeling diode with a low forward voltage.
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NGTB75N60SWG
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
600
75
1.7
2.2
1
1.5
80
8
310
5
-
595
Yes
Price N/A
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