IGBTs | NGTB75N60S

IGBT 600V/75A - Welding

已停产

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastco−packaged free wheeling diode with a low forward voltage.

  • Inverter Welding
  • Welding Machine
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 µs Short−Circuit Capability

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MSL Type

MSL Temp (°C)

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB75N60SWG

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已停产

CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

No

-

600

75

1.7

2.2

1

1.5

80

8

310

5

-

595

Yes

Price N/A

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