MOSFETs | FDC638P

P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-4.5A，48mΩ

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概览

此 P 沟道 2.5V 指定 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于电池电源应用：负载开关和电力管理、电池充电电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.
  • –4.5 A, –20 V.RDS(ON) = 48 mΩ @ VGS = –4.5 V
    RDS(ON) = 65 mΩ @ VGS = –2.5 V
  • 低栅极电荷（10 nC，典型值）
  • Low gate charge (10 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC638P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

-20

-

P-Channel

Single

8

-1.5

-4.5

1.6

65

48

11

10

1160

$0.1733

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