This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
搜寻
Close Search
产品:
2
分享
排序方式
产品系列:
┗
可订购器件:
2
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
参考价格
已停产
Pb
A
H
P
TO-220-3
NA
0
TUBE
50
No
P-Channel
PowerTrench® T1
NA
High Voltage
Standard
0
Single
0
500
6000
20
4
2
75
-
-
-
19
845
-
1.92
100
26
Price N/A
More Details
已停产
Pb
A
H
P
TO-220-3
NA
0
TUBE
50
No
P-Channel
PowerTrench® T1
NA
High Voltage
Standard
0
Single
0
500
6000
20
4
2
75
-
-
-
19
845
-
1.92
100
26
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
支持服务
联系安森美销售团队获得支持,查询或者对比产品细节。
联系销售
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms