Low/Medium Voltage MOSFETs | FDD4685

P 沟道 PowerTrench® MOSFET，-40V，-23A，27mΩ

量产中

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概览

此 P 沟道 MOSFET 是使用 PowerTrench® 专属技术生产的，可提供低 rDS(on) 和良好的开关特性，为应用带来出色性能。

  • This product is general usage and suitable for many different applications.
  • VGS = -10V，ID = -8.4A时，最大RDS(on) = 27mΩ
  • VGS = -4.5V，ID = -7A时，最大RDS(on) = 35mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDD4685

联系销售

量产中

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Yes

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-40

27

±20

-3

-32

69

-

35

-

19

1790

6.1

31

260

140

$0.3228

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可靠性数据

Die Related Summary Data

Device: FDD4685

Equivalent to wafer fab process: TT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

3566152280

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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