这款N沟道增强模式MOSFET采用专有的高单元密度DMOS技术生产。该产品的设计可在最大程度减少导通电阻的同时提供稳固、可靠和快速开关的性能表现。2N7002可用于需要高达400mA直流电的大多数应用,并可提供高达2A的脉冲电流。本产品特别适合于低电压、低电流的应用,如小型伺服电机控制、功率MOSFET栅极驱动器和其他开关应用。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
2N7002
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
60
7500
±20
2.5
0.115
0.2
-
7500
-
1
20
-
-
11
4
$0.1013
More Details
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可靠性数据
Die Related Summary Data
Device: 2N7002
Equivalent to wafer fab process: TO
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TO
0
955961600
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)