Small Signal MOSFETs | 2N7002

N沟道增强模式场效应晶体管60V，0.115A，7.5Ω

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这款N沟道增强模式MOSFET采用专有的高单元密度DMOS技术生产。该产品的设计可在最大程度减少导通电阻的同时提供稳固、可靠和快速开关的性能表现。2N7002可用于需要高达400mA直流电的大多数应用，并可提供高达2A的脉冲电流。本产品特别适合于低电压、低电流的应用，如小型伺服电机控制、功率MOSFET栅极驱动器和其他开关应用。

  • 本产品为通用产品，适合各类不同应用。
  • 小型伺服电机控制
  • 功率MOSFET栅极驱动器

  • 高密度单元设计可实现极低的 RDS(ON)。
  • 电压控制的小型信号开关。
  • 稳固可靠。
  • 高饱和电流能力。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

2N7002

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

60

7500

±20

2.5

0.115

0.2

-

7500

-

1

20

-

-

11

4

$0.1013

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可靠性数据

Die Related Summary Data

Device: 2N7002

Equivalent to wafer fab process: TO

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TO

0

955961600

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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