Small Signal MOSFETs | EFC3C001NUZ

用于 1-2 节锂电子电池保护的双 N 沟道功率 MOSFET，20 V，6 A，30 mΩ

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数据表

购买

概览

此功率 MOSFET 导通电阻低。此器件适用于便携设备的电源开关等应用。它具有两个共漏极 N 沟道 MOSFET，可实现双向电流流动。最适合 1 至 2 节锂离子电池应用。EFC3C001NUZ 满足无铅、无卤素和 RoHS 标准。

  • 1-2 Cells Lithium-ion Battery Charging and Discharging Switch
  • Smartphones
  • Tablets
  • Wearable devices
  • 2.5 V drive
  • Common-Drain type
  • ESD Diode-Protected Gate
  • RoHS compliance

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

EFC3C001NUZTCG

联系销售

已停产

CAD Model

Pb

A

H

P

WLCSP-4

567LM

NA

0

REEL

5000

No

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual Common Drain

0

20

-

10

1.3

6

1.6

Q1=Q2=56

Q1=Q2=30

45

15

NA

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: EFC3C001NUZTCG

Equivalent to wafer fab process: TRENCH SUB

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH SUB

0

38439469336

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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