Small Signal MOSFETs | FDG8850NZ

双 N 沟道 PowerTrench® MOSFET 30 V，0.75A，0.4 mΩ

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概览

此双 N 沟道逻辑电平增强型场效应晶体管是使用高单元密度的 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。此器件专用于在低压应用中替代双极数字晶体管和小信号 MOSFET。因为无需偏置电阻，所以此类双数字 FET 可以替代若干具有各种偏置电阻值的数字晶体管。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 0.4Ω （VGS = 4.5V, ID = 0.75A）
  • 最大rDS(on) = 0.5Ω （VGS = 2.7V, ID = 0.67A）
  • 极低的栅极驱动要求允许在3V电路中运行(VGS(th)<1.5V)
  • 非常小的封装尺寸SC70-6
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG8850NZ

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Lifetime

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CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

30

Q1=Q2=400

12

1.5

0.75

0.36

Q1=Q2=500

Q1=Q2=400

-

1.03

90

-

-

-

-

$0.1653

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可靠性数据

Die Related Summary Data

Device: FDG8850NZ

Equivalent to wafer fab process: T5

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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