Small Signal MOSFETs | FDMD8260LET60

双 N 沟道 Power Trench® MOSFET 60V，5.8mΩ

Obsolete

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概览

此器件采用双 Power (3.3 mm X 5 mm) 封装，包含两个 60V N 沟道 MOSFET。针对半桥/全桥内部连接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on)/Qg FOM 硅。

  • This product is general usage and suitable for many different applications.

  • TJ 额定值扩展至 175°C
  • 最大 rDS(on) = 4.9 mΩ（VGS = 10 V、ID = 15 A
    ）
  • 最大 rDS(on) = 7.7 mΩ（VGS = 4.5 V、ID = 12 A
    ）
  • 是实现桥式拓扑初级侧灵活布局的理想选择
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚排列能力
  • 终端无引线且符合 RoHS 标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8260LET60

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Obsolete

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CAD Model

Pb

A

H

P

PQFN-12

483BN

1

260

REEL

3000

N

N-Channel

PowerTrench® T6

PQFN-12

Small Signal

Logic

0

Dual

0

60

Q1=Q2=5.8

±20

3

15

44

-

Q1=Q2=8.7

-

25

3745

5.2

17

558

22

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMD8260LET60

Equivalent to wafer fab process: T9

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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