双 N 沟道 Power Trench® MOSFET 60V,5.8mΩ

Obsolete

概览

此器件采用双 Power (3.3 mm X 5 mm) 封装,包含两个 60V N 沟道 MOSFET。针对半桥/全桥内部连接的 HS 源和 LS 漏极,低源电感封装,低 rDS(on)/Qg FOM 硅。

  • This product is general usage and suitable for many different applications.

  • TJ 额定值扩展至 175°C
  • 最大 rDS(on) = 4.9 mΩ(VGS = 10 V、ID = 15 A
  • 最大 rDS(on) = 7.7 mΩ(VGS = 4.5 V、ID = 12 A
  • 是实现桥式拓扑初级侧灵活布局的理想选择
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚排列能力
  • 终端无引线且符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8260LET60

CAD Model

Pb

A

H

P

PQFN-12

1

260

REEL

3000

N

N-Channel

PowerTrench® T6

PQFN-12

Small Signal

Logic

0

Dual

0

60

Q1=Q2=5.8

±20

3

15

44

-

Q1=Q2=8.7

-

25

3745

5.2

17

558

22

Price N/A

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