N 沟道 PowerTrench® MOSFET 100V,11.2A,9.8mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 Power Trench® 工艺生产的,针对 rDS(on)、开关性能和坚固性进行了优化。

  • 配电
  • DC/DC Converters
  • Off-line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier

  • VGS = 10 V且ID = 11.2 A时,最大rDS(on) = 9.8 m
  • 在VGS = 6 V且ID = 9 A时,最大值rDS(on) = 16 m
  • 高性能沟道技术可实现极低的rDS(on)
  • 广泛使用的表面贴装封装中的高功率和高电流处理能力。
  • 100%经过UIL测试
  • 符合RoHS标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

100

9.8

±20

4

11.2

5

-

-

-

16.5

1940

6.5

59

440

20

$1.2073

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