Small Signal MOSFETs | FDS86540

N 沟道，PowerTrench® MOSFET，60V，18A，4.5mΩ

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概览

此 N 沟道 MOSFET 专用于提高 DC/DC 转换器的总能效以及最大程度降低其开关节点噪声，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON)、快速开关和体二极管逆向恢复功能。

  • 消费型设备
  • Primary Switch in Insolated DC-DC
  • Synchronous Rectifier
  • Load Switch

  • VGS = 10V，ID = 18A时，最大rDS(on) = 4.5mΩ
  • VGS = 8 V，ID = 16.5 A时，最大rDS(on) = 5.4mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS86540

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T6

SOIC-8

Small Signal

Standard

0

Single

0

60

4.5

±20

4

18

5

-

-

-

53

4820

13

44

1610

67

$1.3659

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可靠性数据

Die Related Summary Data

Device: FDS86540

Equivalent to wafer fab process: T9

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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