Small Signal MOSFETs | FDS8858CZ

双 N 和 P 沟道，PowerTrench® MOSFET，30V

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概览

此类双 N 和 P 沟道增强型功率 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适合最大程度降低导通电阻，同时保持卓越的开关性能。此类器件适用于需要线内低功率损耗和快速开关的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • Inverter
  • Synchronous Buck

  • Q1： N沟道
  • 最大值 RDS(on) = 17mΩ（VGS = 10V，ID = 8.6A）
  • 最大值 RDS(on) = 20mΩ（VGS = 4.5V，ID = 7.3A）Q2： P沟道
  • 最大值 RDS(on) = 20.5mΩ（VGS = 10V，ID = 7.3A）

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8858CZ

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±30

N: 1.0, P:20.5

25

±3

N: 8.6, P: -7.3

2

-

N: 20.0, P:34.5

15

33

1675

-

-

-

-

$0.3709

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可靠性数据

Die Related Summary Data

Device: FDS8858CZ

Equivalent to wafer fab process: T5,TV

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5,TV

0

99806707

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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