双 N 沟道,PowerTrench® MOSFET,100V,3.5A,62mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 Power Trench® 工艺生产的,针对 rDS(on)、开关性能和坚固性进行了优化。

  • This product is general usage and suitable for many different applications.
  • Synchronous Rectifier
  • Primary Switch for Bridge Topology

  • 屏蔽栅极 MOSFET 技术
  • VGS = 10 V,ID = 3.5 A时,最大rDS(on) = 62 mΩ
  • VGS = 6 V,ID = 2.8 A时,最大rDS(on) = 100 mΩ
  • 高性能沟道技术可实现极低的rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Dual

0

100

Q1=Q2=62

±20

4

3.5

31

-

-

-

2.9

299

1.3

23

70

4.7

$1.0948

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