Small Signal MOSFETs | FDS89161

双 N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，2.7A，105mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 Power Trench® 工艺生产的，针对 rDS(on)、开关性能和坚固性进行了优化。

  • This product is general usage and suitable for many different applications.
  • Synchronous Rectifier
  • Primary Switch for Bridge Topology

  • 屏蔽栅极 MOSFET 技术
  • 最大 rDS(on) = 105 mΩ（VGS= 10 V、ID = 2.7 A
    ）
  • 最大 rDS(on) = 171 mΩ（VGS = 6 V、ID = 2.1 A
    ）
  • 高性能沟道技术可实现极低的 rDS(on)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS89161

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Dual

0

100

Q1=Q2=105

±20

4

2.7

31

-

-

-

1.7

158

0.8

21

43

3

$0.6031

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可靠性数据

Die Related Summary Data

Device: FDS89161

Equivalent to wafer fab process: T7

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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