Small Signal MOSFETs | FDS8935

双 P 沟道，Power Trench® MOSFET，-80V，-2.1A，183mΩ

Obsolete

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概览

此 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，针对 rDS(on)、开关性能和坚固性进行了优化。

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Synchronous Rectifier

  • 最大rDS(on) = 183 mO （VGS = -10 V, ID = -2.1 A）
  • 最大值rDS(on) = 247 mO （VGS = -4.5 V, ID = -1.9 A）
  • 高性能沟道技术可实现极低的RDS(on)
  • 在广泛使用的表面贴装封装中可实现高功率和高电流处理能力
  • 100%经过UIL测试
  • 符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8935

Contact Sales

Obsolete

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

-80

Q1=Q2=183

±20

-3

-2.1

3.1

-

Q1=Q2=273.0

-

7

661

2.6

34

47

24

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS8935

Equivalent to wafer fab process: TR

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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