Small Signal MOSFETs | FDT458P

-30V P沟道PowerTrench® MOSFET

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概览

该P沟道MOSFET特别为提高DC/DC转换器的整体效率而设计，采用同步或传统开关脉宽调制(PWM)控制器及电池充电器。 比其他具有可比RDS(ON)规格的MOSFET相比，这些MOSFET拥有更快的开关速度和更低的栅极电荷。

  • This product is general usage and suitable for many different applications.
  • Battery Charging Circuit
  • Motor Drives

  • 3.4 A, -30 V
  • RDS(ON) = 130 mΩ @ VGS = 10 V
  • RDS(ON) = 200 mΩ @ VGS = 4.5 V
  • 快速开关速度
  • 低栅极电荷（2.5nC典型值）
  • 高性能沟道技术可实现极低的RDS(ON)
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT458P

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

Single

0

-30

130

20

-3

-3.4

3

-

200

-

2.5

205

-

-

-

-

$0.2717

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可靠性数据

Die Related Summary Data

Device: FDT458P

Equivalent to wafer fab process: TT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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