双 P 沟道,(-1.5 V) 指定,PowerTrench® MOSFET,-20V,-0.83A,0.5Ω

Lifetime

概览

此双 P 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的,可优化 rDS(on)@VGS = –1.5 V。

  • This product is general usage and suitable for many different applications.
  • Li-Ion Battery Pack

  • VGS = -4.5 V,ID = -0.83 A时,最大rDS(on) = 0.5Ω
  • VGS = –2.5 V,ID = –0.70 A时,最大rDS(on) = 0.7 Ω
  • VGS = –1.8 V,ID = –0.43 A时,最大rDS(on) = 1.2 Ω
  • VGS = –1.5 V,ID = –0.36 A时,最大rDS(on) = 1.8 Ω
  • HBM ESD保护等级 = 1400kV (注3)
  • 符合RoHS标准

Tools and Resources

Product services, tools and other useful resources related to FDY1002PZ

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDY1002PZ

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

-20

-

8

-1

-0.83

0.625

700

500

0.8

2.2

100

-

-

-

-

$0.1631

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.