Small Signal MOSFETs | FDY1002PZ

双 P 沟道，(-1.5 V) 指定，PowerTrench® MOSFET，-20V，-0.83A，0.5Ω

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概览

此双 P 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的，可优化 rDS(on)@VGS = –1.5 V。

  • This product is general usage and suitable for many different applications.
  • Li-Ion Battery Pack

  • VGS = -4.5 V，ID = -0.83 A时，最大rDS(on) = 0.5Ω
  • VGS = –2.5 V，ID = –0.70 A时，最大rDS(on) = 0.7 Ω
  • VGS = –1.8 V，ID = –0.43 A时，最大rDS(on) = 1.2 Ω
  • VGS = –1.5 V，ID = –0.36 A时，最大rDS(on) = 1.8 Ω
  • HBM ESD保护等级 = 1400kV （注3）
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDY1002PZ

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Lifetime

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CAD Model

Pb

A

H

P

SOT-563

419BH

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

-20

-

8

-1

-0.83

0.625

700

500

0.8

2.2

100

-

-

-

-

$0.1631

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可靠性数据

Die Related Summary Data

Device: FDY1002PZ

Equivalent to wafer fab process: TV

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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