Small Signal MOSFETs | FQT2P25

P 沟道，QFET® MOSFET，-250 V，-0.55 A，4.0Ω

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此类 P 沟道 MOSFET 增强型电场效应晶体管使用安森美半导体的平面条纹 DMOS 专属工艺生产。此先进工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于高效开关 DC/DC 转换器。

  • High Efficiency Switching DC/DC Converters

  • -0.55 A、-250 V、RDS(on) = 4.0 Ω（最大值）@ VGS = -10 V、ID = -0.275 A
  • 低栅极电荷（典型值 6.5 nC)
  • 低 Crss（典型值 6.5 pF)
  • 100% 经过雪崩击穿测试

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQT2P25TF

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

250

REEL

4000

N

P-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Standard

0

Single

0

-250

4000

-5

-5

-0.55

2.5

-

-

-

6.5

190

3

400

40

6.5

Price N/A

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可靠性数据

Die Related Summary Data

Device: FQT2P25TF

Equivalent to wafer fab process: 3D

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3D

10

304347029

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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