Small Signal MOSFETs | FQT7N10L

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，1.7 A，350 mΩ，SOT-223

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概览

此 N 沟道增强型功率 MOSFET 是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻，提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • LED 电视
  • 消费型设备
  • 照明

  • 1.7A, 100V, RDS(on) = 350mΩ（最大值）@VGS = 10 V, ID = 0.85A栅极电荷低（典型值：5.8nC)
  • 低 Crss（典型值10pF)
  • 100% 经过雪崩击穿测试
  • 100% avalanche tested

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MSL Type

MSL Temp (°C)

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Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQT7N10LTF

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Lifetime

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

N-Channel

PowerTrench® T1

SC-4

Small Signal

Standard

0

Single

0

100

350

±20

2

1.7

2

-

-

-

4.6

220

2.6

140

55

12

$0.2504

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可靠性数据

Die Related Summary Data

Device: FQT7N10LTF

Equivalent to wafer fab process: 3D

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3D

10

304347029

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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