功率 MOSFET,N 沟道,逻辑电平,QFET®,100 V,1.7 A,350 mΩ,SOT-223
Lifetime
此 N 沟道增强型功率 MOSFET 是使用安森美半导体的平面条纹和 DMOS 专属技术生产的。此先进 MOSFET 技术特别适用于降低导通电阻,提供出色的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Lifetime
Pb
A
H
P
SOT-223-4 / TO-261-4
1
260
REEL
4000
N
N-Channel
PowerTrench® T1
SC-4
Small Signal
Standard
0
Single
0
100
350
±20
2
1.7
2
-
-
-
4.6
220
2.6
140
55
12
$0.2504
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可靠性数据
Die Related Summary Data
Device: FQT7N10LTF
Equivalent to wafer fab process: 3D
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3D
10
304347029
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)