Small Signal MOSFETs | NDC7003P

双 P 沟道增强型场效应晶体管 -60V，-0.34A，5Ω

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概览

此类双 P 沟道增强型场效应晶体管是使用安森美半导体的专属沟槽技术生产的。这种极高密度工艺可最大程度地降低导通电阻，提供了坚固可靠的性能和快速的开关。此产品尤其适用于需要低电流高压侧开关的低压应用。

  • This product is general usage and suitable for many different applications.

  • 0.34 A，50 V。
  • RDS(ON) = 5 Ω @ VGS = -10 V
  • RDS(ON) = 7 Ω @ VGS = -4.7 V
  • 低栅极电荷
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • SuperSOT™ -6封装： 小尺寸（比标准SO-8小72%）；薄型（1mm厚）。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDC7003P

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CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

-60

Q1=Q2=5000

±20

-3.5

-0.34

0.96

-

Q1=Q2=7000

-

1.6

66

0.3

-

13

6

$0.0819

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可靠性数据

Die Related Summary Data

Device: NDC7003P

Equivalent to wafer fab process: TR

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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