Small Signal MOSFETs | NDT3055L

N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ

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此类 N 沟道逻辑电平增强型电场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。此极高密度工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如直流电机控制和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.

  • 4 A，60 V。 RDS(ON) = 0.100 Ω @ VGS = 10 V，RDS(ON) = 0.120 Ω @ VGS = 4.5 V。
  • 低驱动要求使得能够直接从逻辑驱动器进行操作。 VGS(TH)< 2V。
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。

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MSL Temp (°C)

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Container Qty.

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Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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NDT3055L

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

N-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

NA

0

60

100

±20

2

4

3

-

120

-

13

345

3.2

-

110

30

$0.4045

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可靠性数据

Die Related Summary Data

Device: NDT3055L

Equivalent to wafer fab process: TO

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TO

0

955961600

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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