方案
By Technology
NTGD1100L 在一个封装中集成了 P 沟道和 N 沟道 MOSFET。 该器件尤其适用于需要低控制信号、低电池电压和高负载电流的便携式电子设备。 该 P 沟道器件专用于使用安森美半导体先进沟槽技术的负载开关。 该 N 沟道与外部电阻 (R1) 一起用作电平移位,驱动 P 沟道。 该 N 沟道 MOSFET 具有内部 ESD 保护,可由低至 1.5 V 的逻辑信号驱动。 NTGD1100L 基于 1.8 至 8.0 V 的电源线运行,对 VIN 和 VON/OFF 应用 8.0 V 时可驱动最高 3.3 A 的负载。
如需购买产品或样品,请先登录您的安森美账号。
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NTGD1100LT1G
Pb
A
H
P
SC-74
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
SC-6
Small Signal
Logic
0
NA
0
-8
-
8
1.2
3.3
0.83
55
40
3.7
-
NA
-
-
-
-
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
可靠性数据
Die Related Summary Data
Device: NTGD1100LT1G
Equivalent to wafer fab process: TMOS STD
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TMOS STD
6
8818554393
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)