方案
By Technology
NXH010P120MNF1是一款EliteSiC MOSFET模块,在F1模块中包含一个10mohm 1200C SiC MOSFET半桥和一个NTC热敏电阻。
Product services, tools and other useful resources related to NXH010P120MNF1
搜寻
Close Search
产品:
4
分享
排序方式
产品系列:
┗
可订购器件:
4
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Configuration
VBR Max (V)
RDS(on) Typ (mΩ)
Application
Reference Price
NXH010P120MNF1PG
Active
Pb
A
H
P
PIM18 33.8x42.5 (PRESS FIT)
NA
0
BTRAY
28
F
Half-Bridge
1200
10
EV Charging, Energy Infrastructure
$115.3975
More Details
NXH010P120MNF1PNG
Active
Pb
A
H
P
PIM18 33.8x42.5 (PRESS FIT)
NA
0
BTRAY
28
F
Half-Bridge
1200
10
EV Charging, Energy Infrastructure
$100.6644
More Details
NXH010P120MNF1PTG
Active
Pb
A
H
P
PIM18 33.8x42.5 (PRESS FIT)
NA
0
BTRAY
28
F
Half-Bridge
1200
10
EV Charging, Energy Infrastructure
$115.3975
More Details
NXH010P120MNF1PTNG
Active
Pb
A
H
P
PIM18 33.8x42.5 (PRESS FIT)
NA
0
BTRAY
28
F
Half-Bridge
1200
10
EV Charging, Energy Infrastructure
$94.7837
More Details
Show More
1-25 of 25
Products per page
Jump to :
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms
可靠性数据
Die Related Summary Data
Device: NXH010P120MNF1PNG
Equivalent to wafer fab process: SIC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
SIC
0
3855921070
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)