Silicon Carbide (SiC) Modules | NXH010P120MNF1

SiC模块- EliteSiC 2-Pack半桥拓扑1200V 10mohm SiC M1 MOSFET

量产中

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概览

NXH010P120MNF1是一款EliteSiC MOSFET模块，在F1模块中包含一个10mohm 1200C SiC MOSFET半桥和一个NTC热敏电阻。

  • AC-DC转换
  • DC-AC转换
  • DC-DC转换

  • 电车充电桩
  • 储能系统
  • 太阳能逆变器三相
  • 不间断电源

  • 推荐栅极电压18V - 20V
  • 低热阻
  • 可选预涂热界面材料（TIM）和无预涂TIM

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参考价格

NXH010P120MNF1PG

联系销售

量产中

CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

No

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$115.3975

More Details

NXH010P120MNF1PNG

联系销售

量产中

CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

No

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$100.6644

More Details

NXH010P120MNF1PTG

联系销售

量产中

CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

No

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$115.3975

More Details

NXH010P120MNF1PTNG

联系销售

量产中

CAD Model

Pb

A

H

P

PIM18 33.8x42.5 (PRESS FIT)

180BW

NA

0

BTRAY

28

No

Half-Bridge

1200

10

EV Charging, Energy Infrastructure

$94.7837

More Details

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可靠性数据

Die Related Summary Data

Device: NXH010P120MNF1PNG

Equivalent to wafer fab process: SIC

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

30645988640

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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