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4N29M、4N30M、4N32M、4N33M、H11B1M 和 TIL113M 具有与硅外延平面光电达林顿进行光耦合的砷化镓红外发光二极管。
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CTR (Min) (%)
CTR tested @ IF (mA)
VCE(sat) (Max) (V)
BVCEO (Min) (V)
BVCBO (Min) (V)
BVECO (Min) (V)
ton (Max) (µs)
toff (Max) (µs)
VISO (Min) (V)
TOPR (Min) (°C)
TOPR (Max) (°C)
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4N33M
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4N33SM
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4N33SR2M
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4N33TVM
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4N33VM
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可靠性数据
Die Related Summary Data
Device: 4N33M
Equivalent to wafer fab process: BN,GA
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BN,GA
0
252701301
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)