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H11G1M 和 H11G2M 是光电达林顿型光耦合器。这些器件具有与硅达灵顿连接光电晶体管耦合的砷化镓红外发光二极管,具有集成的基极-发射极电阻,可优化高温特性。
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MSL Temp (°C)
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CTR (Min) (%)
CTR tested @ IF (mA)
VCE(sat) (Max) (V)
BVCEO (Min) (V)
BVCBO (Min) (V)
BVECO (Min) (V)
ton (Max) (µs)
toff (Max) (µs)
VISO (Min) (V)
TOPR (Min) (°C)
TOPR (Max) (°C)
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H11G2M
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H11G2SM
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H11G2SR2M
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H11G2SR2VM
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H11G2TVM
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H11G2VM
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可靠性数据
Die Related Summary Data
Device: H11G2M
Equivalent to wafer fab process: BN,GA
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BN,GA
0
252701301
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)