Silicon Photomultipliers (SiPM) | J-SERIES

硅光电倍增传感器，J 系列 (SiPM)

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安森美半导体的 J 系列硅光电倍增传感器 (SiPM) 针对高性能计时应用进行了优化，如 ToF-PET（飞行时间正电子发射层析成像）。由于提高了微单元密度，J 系列传感器可以实现 50% 的光电检测效率 (PDE)，灵敏度可扩展到紫外线。该系列具有行业领先的低低暗计数率 50 kHz/mm2，并且因为此类传感器是使用大容量 CMOS 硅工艺生产的，所以它们具有 ±250 mV 的卓越中断电压一致性。 J 系列提供在 TSV 芯片级封装中封装的 3 mm、4 mm 和 6 mm 尺寸，符合行业标准的无铅回流焊接工艺。J 系列还具有安森美半导体独特的快速输出，适用于快速计时功能。

  • Medical Imaging
  • Hazard & Threat
  • 3D Ranging & Sensing
  • Biophotonics & Sciences
  • High Energy Physics

  • Positron Emission Tomography
  • Radiation Detection

  • High-density microcells
  • J-Series sensors feature ON Semiconductor's unique 'fast output' terminal
  • Temperature stability of 21.5 mV/°C
  • Exceptional breakdown voltage uniformity of ±250 mV
  • Available in a reflow solder compatible TSV chip-scale package
  • Ultra-low dark count rates of 50 kHz/mm2 typical
  • Optimized for high-performance timing applications, such as ToF-PET
  • 3 mm, 4 mm and 6 mm sensor sizes
  • Bias voltage of <30 V

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MICROFJ-30020-TSV-TR

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MICROFJ-30020-TSV-TR1

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MICROFJ-30035-TSV-TR

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MICROFJ-40035-TSV-TR

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MICROFJ-60035-TSV-TR

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可靠性数据

Die Related Summary Data

Device: MICROFJ-30020-TSV-TR

Equivalent to wafer fab process: CMOS SUB

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

CMOS SUB

2

920154574

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Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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