MC14015B 双 4 位静态移位寄存器在单片结构中使用 MOS P 沟道和 N 沟道增强模式器件构造。它由两个相同的独立 4 状态串行输入/并行输出寄存器组成。每个寄存器都有独立的时钟和重置输入,以及单个串行数据输入。寄存器状态为 D 型主从触发器。在正向时钟转换期间,数据从一级转移到下一级。在重置线上施加高电平时,可清除每个寄存器。这些互补 MOS 移位寄存器主要用于需要低功耗和/或抗扰度的缓冲器存储和串并转换。
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可靠性数据
Die Related Summary Data
Device: MC14015BDG
Equivalent to wafer fab process: CMOS STD
产品技术
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
CMOS STD
4
5047673171
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)