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宽禁带生态系统:快速开关和颠覆性的仿真环境 – 第一部分

由  James Victory 发布  - 12-14-2018 

在本博客系列我们将介绍宽禁带生态系统和颠覆性的仿真建模。

宽禁带材料使我们能够跨越目前基于硅的技术。它们的带隙大,导致介电击穿更高,使导通电阻(RSP)更低。较高的电子饱和速度使高频设计和工作成为可能。较低的漏电流和较好的热导率有利于在高温下的工作。

安森美半导体提供一个重点围绕宽禁带方案的独一无二的生态系统,从提高强固性和速度的SiC二极管、SiC MOSFET,一直到SiC MOSFET的高端IC门极驱动器。除了硬件,我们还提供物理SPICE模型,帮助设计人员在仿真中实现其应用性能而无需昂贵的测量周期。

我们的预测性离散建模支持系统级仿真,从而优化器件的系统级品质因数如能效,而不仅仅是器件级的品质因数如RDS(ON)。此外,设计人员还可有信心仿真数据表中未涵盖的工作条件,如开关应用中的不同温度、总线电压、负载电流和输入门极电阻等。

为实现这一切,模型必须是基于物理的、直观的、预测的,最重要的是准确的。

在IC行业,追溯至几十年前,支持CAD设计的环境采用SPICE模型已对于IC设计人员准确预测电路性能、缩短制造周期具有重要意义。直至今日,电力电子CAD环境远远落后于IC行业,部分原因是缺乏可靠的SPICE模型。电力电子器件模型基于简单的子电路和复杂的非物理行为的模型,最终仿真的可靠性不高。

简单的子电路太初级,无法充分捕获所有器件的性能。在图1中,我们展示了一个CRSS图,将一个典型的简单模型(蓝色)与我们更先进的物理模型(绿色)和测量数据(红色)进行比较。显然,您可看到简单的模型没有捕获到非线性电容效应,最终导致了不准确的动态开关仿真。

众所周知,更为精确、复杂行为的模型会导致收敛问题。此外,此类模型通常由专用的仿真器行为语言(如MAST™)编写,因此不能跨多个仿真器平台进行移植。

一般而言,电力电子模型显然不是基于工艺技术和布板的,也不是基于芯片布局的可扩展性。

通过我们的物理可扩展模型,我们开发了一个适用于整个技术平台的模型。也就是说,它不是一个由经验拟合参数填充的单个模型库,最终的曲线适合每一产品。通过我们的芯片扩展,我们可在一种技术内快速衍生,只需输入给定产品的芯片布局参数。

在下一个层次,模型中基于物理工艺的相关性使我们能够预测新的虚拟技术变化的影响。显然,早期设计有助于从应用角度推动技术需求,并加快上市时间。一方面,工艺和设备设计工程师使用限定的元器件仿真,也称之为TCAD。另一方面,应用级和系统级设计人员使用基于SPICE的仿真环境。基于工艺参数的SPICE模型有助于将这两方面结合起来。

在下一篇博客中我们将介绍碳化硅功率MOSFET模型,敬请期待!

标签:Industrial, Power Supply, MOSFET
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