Evaluation Board | NCP51810GAN1GEVB

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e-mode) GaN HEMT power switches in half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as -3.5 V to +150 V (typical) common mode voltage range for the high-side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under-voltage lockout (UVLO) and IC thermal shutdown.