IGBTs | AFGHL40T120RLD

IGBT - Automotive Grade 1200 V 40 A

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概览

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • HEV-EV on board charger

  • Electric vehicles
  • Hybrid electric vehicles

  • AEC Q101 qualified
  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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AFGHL40T120RLD

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CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

F

-

1200

40

1.75

1.51

1.2

3.4

195

0

395

9

0

264

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: AFGHL40T120RLD

Equivalent to wafer fab process: TRENCH IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH IGBT

0

8782900981

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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