Smarter Pairing Through Intelligence
An industry first web tool that intelligently simplifies Gate driver and power switch pair selection. The Elite Pairing Studio recommends the optimal pairing of our EliteSiC MOSFETs, and Gate Drivers, delivering decisions 10× faster by evaluating all gate drivers in seconds and enabling higher performance power designs.
Contact us for any question about the tool.
Resources and Products
The Elite Pairing Studio accelerates evaluation of multiple onsemi SiC MOSFETs and Gate Driver combinations, delivering results 10× faster than evaluating each pairing individually.
Instructions on how to effectively use the Elite Pairing Studio, accelerates evaluation of multiple onsemi EliteSiC MOSFETs and Gate Driver combinations.
Elite Pairing Studio analyzes SiC MOSFET driver compatibility to guide precise power‑design decisions.
SiC MOSFETs are designed to be fast and rugged, offering system benefits such as high efficiency and reduced system size and cost.
Gate drivers connect control signals to power switches. Explore our portfolio of isolated and non‑isolated drivers with advanced features.
Workflow
The Elite Pairing Studio automatically evaluates every compatible gate driver for the selected device based on electrical performance.
Results can be ranked by calculated metrics such as losses and timing, as well as gate driver attributes including supply voltage range and price, producing an instant, data‑driven shortlist with no manual datasheet comparisons required.
During the simulation step, the Elite Pairing Studio generates detailed switching waveforms for the selected MOSFET and gate‑driver combination using onsemi’s physics‑based SPICE models. Engineers can instantly see how the pairing behaves under realistic operating conditions.
Finally, the Elite Pairing Studio consolidates the simulation results to provide a clear comparison of how each gate driver performs with the selected SiC MOSFET. Engineers gain data‑driven insights that streamline confirmation of the best‑fit solution for their design.
Elite Pairing Studio FAQs
An industry first web tool that identifies, simulates, and analyzes compatible gate drivers for onsemi SiC MOSFETs.
Combination is calculated using device level electrical parameters such as gate
charge, drive strength, switching characteristics, and safe operating limits.
Yes. The tool uses onsemi’s physical validated SiC MOSFET SPICE and gate driver behavioral models to reflect realistic device behavior under typical operating conditions.
Key parameters such as bus voltage, gate resistance, and load conditions can be modified to observe their impact on switching performance.
No installation is required. The Elite Pairing Studio runs entirely in the browser as part of the onsemi design tool ecosystem.
This specific workflow is optimized for SiC MOSFET and gate driverver pairing. Additional device families such as Si MOSFETS and IGBTs will be supported in the near future.
By automating device combination checks, generating waveforms instantly, and consolidating analysis, the tool reduces manual datasheet review and simulation setup time.
Rankings are based on electrical combination, switching performance, drive capability, and expected efficiency under typical operating conditions.
Yes, through your myon account, you results are only visible by you.
Yes, the tool stores your work only after you run the simulation.