IGBTs | FGD3245G2-F085V

IGBT， N 沟道点火，DPAK，1.3V，320mJ，EcoSPARK® II

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概览

FGD3245G2-F085C 是使用安森美半导体的 EcoSPARK® 2 工艺设计的 N 沟道 IGBT，有助于消除外部保护电路。该技术适用于在汽车点火系统的严酷环境中驱动线圈，在更高的运行温度下也能提供出色的 Vsat 和 SCIS 能源能力。逻辑电平门极输入具有 ESD 保护，以及一个集成式门极电阻。集成式齐纳电路会将 IGBT 的集极-射极电压限制在 450 V，可实现需要更高火花电压的系统。

  • Automotive
  • Engine Management
  • Ignition Systems
  • SCIS Energy = 320 mJ at TJ = 25°C
  • Logic Level Gate Drive
  • Low Saturation Voltage
  • Qualified to AEC Q101
  • RoHS Compliant

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可靠性数据

Die Related Summary Data

Device: FGD3245G2-F085V

Equivalent to wafer fab process: IGN IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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