IGBTs | FGH12040WD_F155

IGBT，1200V，40A，场截止沟槽

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安森美半导体的新型场截止第 2 代 IGBT 系列采用新型场截止 IGBT 工艺，为低导通和开关损耗至关重要的焊接机应用提供最佳性能。

  • 最大结温： TJ =175°C
  • 正温度系数，易于并联运行
  • 低饱和电压： VCE(sat) = 2.3 V（典型值） @ IC = 40
  • ILM(1) 部件 100% 检测
  • 短路耐用性> 5 us @ 150°C
  • 高输入阻抗
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

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FGH12040WD-F155

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

N

-

1200

-

-

3.6

1

6.9

-

6.8

226

5

-

428

-

Price N/A

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