IGBTs | FGH12040WD_F155

IGBT，1200V，40A，场截止沟槽

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概览

安森美半导体的新型场截止第 2 代 IGBT 系列采用新型场截止 IGBT 工艺，为低导通和开关损耗至关重要的焊接机应用提供最佳性能。

  • 最大结温： TJ =175°C
  • 正温度系数，易于并联运行
  • 低饱和电压： VCE(sat) = 2.3 V（典型值） @ IC = 40
  • ILM(1) 部件 100% 检测
  • 短路耐用性> 5 us @ 150°C
  • 高输入阻抗
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

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VCE(sat) Typ (V)

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FGH12040WD-F155

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CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

N

-

1200

-

-

3.6

1

6.9

-

6.8

226

5

-

428

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH12040WD-F155

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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