IGBTs | NGTB50N60FWG

IGBT, 600 V, 50 A

已停产

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

  • Solar Inverters
  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Optimized for Very Low VCEsat
  • Low Switching Loss
  • Soft Fast Reverse Recovery Diode
  • 5µs Short Circuit Capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB50N60FWG

联系销售

已停产

CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

No

-

600

50

1.45

1.95

1.2

1.1

77

8

310

5

-

223

Yes

Price N/A

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