This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.
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NGTD30T120F2WP
Obsolete
Pb
A
H
P
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NA
0
WJAR
1
N
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1200
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2
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10
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Price N/A
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