IGBT 1200V 40A FS2 bare die

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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Eoff Typ (mJ)

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Irr Typ (A)

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EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTD30T120F2WP

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CAD Model

Pb

A

H

P

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NA

0

WJAR

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1200

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2

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10

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