Ultra Field Stop IGBT 1200V 60A bare die

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and provides superiorperformance in demanding switching applications, offering both low onstate voltage and minimal switching loss.

  • Solar Inverter
  • Industrial
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

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Co-Packaged Diode

Reference Price

PCFG60T120SQF

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Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

1200

240

1.7

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-

-

-

-

-

-

Price N/A

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