IGBTs | PCGA300T65DF8M1

IGBT 650 V, 300 A Field Stop Trench Gen3 (FS3) Bare Die with Solderable/Sinterable Top Metal. Pairing with PCRKA30065F8M1

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This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 12mm x 12mm. Its emitter pads are covered with Ni/Ag solderable/sinterable top metal, which enables advanced power module assembly technologies for emittering connection, including Ag Sintering and Cu bare soldering, etc.

  • Automotive Traction modules
  • General Power Modules

  • xEV

  • AEC−Q101 Qualified
  • Maximum Junction Temperature 175°C
  • Positive Temperature Coefficient
  • Integrated Current Sensor
  • Integrated Temperature Sensor
  • Short Circuit Rated
  • Very Low Saturation Voltage: VCE(SAT) = 1.5 V(Typ.) @ IC = 300 A

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PCGA300T65DF8M1

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Pb

A

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P

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NA

0

MTFRM

1

N

-

650

300

1.25

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5

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可靠性数据

Die Related Summary Data

Device: PCGA300T65DF8M1

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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