双 N 沟道,PowerTrench® MOSFET,30 V, 167 A,1.0 mΩ

Obsolete

概览

此 封装 在共源配置中集成了两个内部连接的 N 沟道器件。 因此实现了极低的封装寄生,以及通向底部共源片的优化热路径。 提供了极小的占地面积 (5 x 6 mm),实现了更高的功率密度。

  • Isolated DC-DC Synchronous Rectifier
  • Common Ground Load Switches

  • Common Source Configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

CAD Model

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Logic

0

Dual

0

30

Q1=Q2=1

3

3

167

43

-

Q1=Q2=1.3

8.8

46

7090

-

-

-

-

Price N/A

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